SK Hynix HMT325S6BFR8C-H9 2GB vs Crucial Technology CT8G4DFS8266.C8FN 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Crucial Technology CT8G4DFS8266.C8FN 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FN 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 41

左右 -24% 更低的延时
更快的读取速度，GB/s

16.4 11.6

测试中的平均数值
更快的写入速度，GB/s

11.3 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 33
读取速度，GB/s

11.6 16.4
写入速度，GB/s

7.3 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 2919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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G Skill Intl F4-4000C16-16GTZRA 16GB

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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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Kingston ACR256X64D3S1333C9 2GB

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A-DATA Technology AD4U240038G17-BHYA 8GB

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Samsung M393B5270CH0-CH9 4GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

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Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

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AMD R538G1601U2S 8GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M471A1A43CB1-CRC 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMR32GX4M4C3333C16 8GB

Corsair CMR32GX4M4C3333C16 8GB

PUSKILL DDR3 1600 8G 8GB

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