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SK Hynix HMT325S6CFR8C-PB 2GB
Teikon TMA851S6AFR6N-UHHC 4GB

SK Hynix HMT325S6CFR8C-PB 2GB vs Teikon TMA851S6AFR6N-UHHC 4GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
Teikon TMA851S6AFR6N-UHHC 4GB 需要考虑的原因
Teikon TMA851S6AFR6N-UHHC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
Teikon TMA851S6AFR6N-UHHC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 30
  • 读取速度，GB/s
    10.9 left arrow 13.5
  • 写入速度，GB/s
    6.6 left arrow 6.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 1338

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

Teikon TMA851S6AFR6N-UHHC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
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Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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Kingston KKRVFX-MIE 8GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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内存RAM
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Samsung M378A2K43EB1-CWE 16GB
内存RAM
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内存RAM
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G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
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内存RAM
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Corsair CMX8GX3M2A2000C9 4GB
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G Skill Intl F4-3000C16-16GSXFB 16GB
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