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SK Hynix HMT351S6CFR8C-PB 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

SK Hynix HMT351S6CFR8C-PB 4GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

总分
star star star star star
SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分
star star star star star
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

差异 规格 评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 66
    左右 30% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 7.3
    测试中的平均数值
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB 需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 11.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 66
  • 读取速度，GB/s
    11.6 left arrow 14.7
  • 写入速度，GB/s
    8.0 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 1699

SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Heoriady M378A1K43BB2-CTD 8GB
Heoriady M378A1K43BB2-CTD 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
G Skill Intl F2-9600CL6-2GBRH 2GB
G Skill Intl F2-9600CL6-2GBRH 2GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G13332 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Team Group Inc. DDR4 3000 4GB
Team Group Inc. DDR4 3000 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HP26D4U6S8ME-8X 8GB
Kingston HP26D4U6S8ME-8X 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C17-8GNT 8GB
G Skill Intl F4-2400C17-8GNT 8GB
内存RAM