SK Hynix HYMP112U64CP8-S5 1GB vs Crucial Technology CT16G4DFD832A.C16FJ 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 16.4

测试中的平均数值
更快的写入速度，GB/s

2,978.2 16.2

测试中的平均数值

Crucial Technology CT16G4DFD832A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD832A.C16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 66

左右 -83% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 36
读取速度，GB/s

2,929.1 16.4
写入速度，GB/s

2,978.2 16.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

511 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3333C16-16GTZB 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905678-014.A00G 4GB

Kingston 9905678-014.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Transcend Information AQD-SD4U8GE21-SG 8GB

Transcend Information AQD-SD4U8GE21-SG 8GB