SK Hynix HYMP112U64CP8-Y5 1GB vs Kingmax Semiconductor GLLF62F-C6---------- 4GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值

Kingmax Semiconductor GLLF62F-C6---------- 4GB

需要考虑的原因
Kingmax Semiconductor GLLF62F-C6---------- 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 62

左右 -170% 更低的延时
更快的写入速度，GB/s

13.2 1,658.4

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 23
读取速度，GB/s

4,216.7 17.0
写入速度，GB/s

1,658.4 13.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

688 2935

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Patriot Memory (PDP Systems) PSD48G24002 8GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston KGTWW1-MIE 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Kingston KKRVFX-MIE 8GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-2666C15-8GVB 8GB

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Gloway International Co. Ltd. WAR4U2666D19081C 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M2B3200C16 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

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A-DATA Technology DQVE1908 512MB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB