SK Hynix HYMP125S64CP8-S6 2GB vs Inmos + 256MB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 11.5

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 68

左右 -127% 更低的延时
更快的写入速度，GB/s

9.1 2,013.5

测试中的平均数值
更高的内存带宽，mbps

16800 6400

左右 2.63 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

Inmos + 256MB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 30
读取速度，GB/s

4,402.8 11.5
写入速度，GB/s

2,013.5 9.1
内存带宽，mbps

6400 16800

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz no data
排名PassMark (越多越好)

701 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 99U5712-002.A00G 16GB

Kingston 99U5712-002.A00G 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Corsair CMD128GX4M8B2800C14 16GB

Corsair CMD128GX4M8B2800C14 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Avant Technology H641GU67G1600G 8GB

Avant Technology H641GU67G1600G 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

Corsair CM3B4G2C1600L9 4GB

Corsair CM3B4G2C1600L9 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-2133C15-8GFT 8GB

G Skill Intl F4-2133C15-8GFT 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB