SK Hynix HYMP164U64CP6-Y5 512MB vs Crucial Technology BLT16G4D30BET4.C16FD 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 13.8

测试中的平均数值

Crucial Technology BLT16G4D30BET4.C16FD 16GB

需要考虑的原因
Crucial Technology BLT16G4D30BET4.C16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 44

左右 -42% 更低的延时
更快的读取速度，GB/s

16.8 14

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 31
读取速度，GB/s

14,740.4 16.8
写入速度，GB/s

8,883.4 13.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2811 3405

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Team Group Inc. TEAMGROUP-SD4-2133 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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PNY Electronics PNY 2GB

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Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Kingston 9905403-444.A00LF 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB