SK Hynix HYMP512S64CP8-Y5 1GB vs Crucial Technology CT4G4DFS8266.C8FE 4GB

总分

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

差异规格评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 14

测试中的平均数值

Crucial Technology CT4G4DFS8266.C8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 68

左右 -45% 更低的延时
更快的写入速度，GB/s

8.4 1,670.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512S64CP8-Y5 1GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 47
读取速度，GB/s

3,554.9 14.0
写入速度，GB/s

1,670.7 8.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

513 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston KHX2133C13D4/8GX 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston ACR16D3LS1KNG/4G 4GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BL8G30C15U4R.M8FE1 8GB

Corsair CM3B8G2C1600L9L 8GB

Corsair CM3B8G2C1600L9L 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB