SK Hynix HYMP512U64CP8-Y5 1GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

总分

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

差异规格评论

差异

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

InnoDisk Corporation M4S0-8GSSOCIK 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCIK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 63

左右 -163% 更低的延时
更快的写入速度，GB/s

8.7 1,583.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512U64CP8-Y5 1GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 24
读取速度，GB/s

3,895.6 15.9
写入速度，GB/s

1,583.7 8.7
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

639 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston 99U5584-004.A00LF 4GB

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Kingston KHX3733C19D4/8GX 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BLS8G4D240FSE.16FBD 8GB

Kingston HX316C10F/4 4GB

Kingston HX316C10F/4 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

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G Skill Intl F4-3200C14-16GTZKY 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Kingston 9905678-041.A00G 4GB