Smart Modular SF564128CJ8N6NNSEG 4GB vs A-DATA Technology AO1P32NCSV1-BDBS 16GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 46

左右 24% 更低的延时

A-DATA Technology AO1P32NCSV1-BDBS 16GB

需要考虑的原因
A-DATA Technology AO1P32NCSV1-BDBS 16GB

报告一个错误

更快的读取速度，GB/s

16.5 12.3

测试中的平均数值
更快的写入速度，GB/s

13.5 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 46
读取速度，GB/s

12.3 16.5
写入速度，GB/s

7.3 13.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1570 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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UMAX Technology 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905701-018.A00G 16GB

Kingston 9905701-018.A00G 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB