STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMK16GX4M4A2800C16 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMK16GX4M4A2800C16 4GB

Corsair CMK16GX4M4A2800C16 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 14.3

测试中的平均数值

Corsair CMK16GX4M4A2800C16 4GB

需要考虑的原因
Corsair CMK16GX4M4A2800C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 63

左右 -66% 更低的延时
更快的写入速度，GB/s

11.2 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK16GX4M4A2800C16 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 38
读取速度，GB/s

3,231.0 14.3
写入速度，GB/s

1,447.3 11.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2839

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX4M2B3200C16 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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Corsair CMT128GX4M8X3600C18 16GB

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Kingston KVR800D2N6/2G 2GB

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Corsair CMD32GX4M4B2400C10 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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A-DATA Technology AO2P21FC4R1-BRFS 4GB