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Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4133C19-4GTZ 4GB

Swissbit MEU25664D6BC2EP-30 2GB vs G Skill Intl F4-4133C19-4GTZ 4GB

总分
star star star star star
Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分
star star star star star
G Skill Intl F4-4133C19-4GTZ 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

差异 规格 评论

差异

Swissbit MEU25664D6BC2EP-30 2GB 需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.5
    测试中的平均数值
G Skill Intl F4-4133C19-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-4133C19-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 68
    左右 -258% 更低的延时
  • 更快的写入速度，GB/s
    14.9 left arrow 1,944.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4133C19-4GTZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 19
  • 读取速度，GB/s
    3,973.0 left arrow 19.5
  • 写入速度，GB/s
    1,944.9 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    673 left arrow 3355

Swissbit MEU25664D6BC2EP-30 2GB RAM的比较

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

G Skill Intl F4-4133C19-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CM4X16GE2666C18S4 16GB
Corsair CM4X16GE2666C18S4 16GB
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A-DATA Technology VDQVE1B16 2GB
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InnoDisk Corporation M4S0-8GS1NCIK 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16G2666CL19 16GB
Micron Technology 16G2666CL19 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
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内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
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G Skill Intl F4-3200C22-16GRS 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Samsung M378A1G43DB0-CPB 8GB
内存RAM
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Kingston ACR16D3LS1KBG/8G 8GB
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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
内存RAM
Kingston 9905403-170.A00LF 2GB
Kingston 9905403-170.A00LF 2GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905678-029.A00G 8GB
Kingston 9905678-029.A00G 8GB
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
内存RAM