takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 20.1

测试中的平均数值

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的写入速度，GB/s

13.7 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

5,535.6 20.1
写入速度，GB/s

1,852.4 13.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB