takeMS International AG TMS2GB264D083805EV 2GB vs Corsair CMK16GX4M2Z4000C18 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Corsair CMK16GX4M2Z4000C18 8GB

Corsair CMK16GX4M2Z4000C18 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值

Corsair CMK16GX4M2Z4000C18 8GB

需要考虑的原因
Corsair CMK16GX4M2Z4000C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 50

左右 -85% 更低的延时
更快的写入速度，GB/s

16.3 1,457.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMK16GX4M2Z4000C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 27
读取速度，GB/s

3,757.3 17.0
写入速度，GB/s

1,457.4 16.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

557 3784

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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SK Hynix HMA82GS6CJR8N-V-V 16GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston KHX16LC9/8GX 8GB

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Gloway International Co. Ltd. YCT4S2666D19081C 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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SK Hynix HMAA1GS6CJR6N-XN 8GB