takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology CT8G4DFS824A.C8FAD1 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FAD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 50

左右 -67% 更低的延时
更快的写入速度，GB/s

10.3 1,457.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 30
读取速度，GB/s

3,757.3 15.7
写入速度，GB/s

1,457.4 10.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

557 2742

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

Corsair CMK16GX4M1B3000C15 16GB

Corsair CMK16GX4M1B3000C15 16GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

G Skill Intl F4-3600C18-16GTZR 16GB

G Skill Intl F4-3600C18-16GTZR 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB