takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology CT8G4SFD8213.C16FDD2 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FDD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 50

左右 -61% 更低的延时
更快的写入速度，GB/s

12.1 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 31
读取速度，GB/s

3,757.3 15.3
写入速度，GB/s

1,457.4 12.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 2539

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G32C16S4B.M16FE 16GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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Kingston KP4T2F-PSB 4GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Corsair CMK16GX4M2C3600C20 8GB

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) PSD44G266681 4GB

Patriot Memory (PDP Systems) PSD44G266681 4GB