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takeMS International AG TMS2GB264D083805EV 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
22.6
测试中的平均数值
需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
50
左右 -56% 更低的延时
更快的写入速度,GB/s
16.4
1,457.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
32
读取速度,GB/s
3,757.3
22.6
写入速度,GB/s
1,457.4
16.4
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
557
3837
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D083805EV 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
A-DATA Technology AD73I1B1672EG 2GB
Transcend Information TS2GSH64V1B 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KHX3600C17D4/8GX 8GB
A-DATA Technology DQKD1A08 1GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Corsair CMD16GX3M4A2666C11 4GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905625-030.A00G 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMSX64GX4M2A2933C19 32GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M378A1K43EB2-CWE 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M1D3000C16 32GB
报告一个错误
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Bug description
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