Transcend Information TS512MSK64W6H 4GB vs Kingston 9905599-025.A00G 8GB

总分

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

总分

Kingston 9905599-025.A00G 8GB

Kingston 9905599-025.A00G 8GB

差异规格评论

差异

Transcend Information TS512MSK64W6H 4GB

需要考虑的原因
Transcend Information TS512MSK64W6H 4GB

报告一个错误

Kingston 9905599-025.A00G 8GB

需要考虑的原因
Kingston 9905599-025.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

14.5 12.1

测试中的平均数值
更快的写入速度，GB/s

9.8 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Transcend Information TS512MSK64W6H 4GB

Kingston 9905599-025.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

12.1 14.5
写入速度，GB/s

8.0 9.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1989 2472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMW16GX4M2Z4600C18 8GB

Corsair CMW16GX4M2Z4600C18 8GB

OCZ OCZ2P8002G 2GB

OCZ OCZ2P8002G 2GB

Patriot Memory (PDP Systems) PSD22G80026 2GB

Patriot Memory (PDP Systems) PSD22G80026 2GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Corsair CMK64GX4M4B2800C14 16GB

Corsair CMK64GX4M4B2800C14 16GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB