TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CM4X16GE2400C16K4 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值
更快的写入速度，GB/s

870.4 11.0

测试中的平均数值

Corsair CM4X16GE2400C16K4 16GB

需要考虑的原因
Corsair CM4X16GE2400C16K4 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 87

左右 -181% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CM4X16GE2400C16K4 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 31
读取速度，GB/s

3,155.6 15.3
写入速度，GB/s

870.4 11.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 2959

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT31GR7CFR4C-PB 8GB

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AMD AE34G1601U1 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Crucial Technology CT8G4DFS8266.K8FB 8GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

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G Skill Intl F2-9600CL6-2GBRH 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-3000C15-4GVSB 4GB