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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C19-8GTZKW 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-4000C19-8GTZKW 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F4-4000C19-8GTZKW 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 15.8
    测试中的平均数值
G Skill Intl F4-4000C19-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-4000C19-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 87
    左右 -248% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C19-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 25
  • 读取速度，GB/s
    3,155.6 left arrow 19.0
  • 写入速度，GB/s
    870.4 left arrow 15.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 3668

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

G Skill Intl F4-4000C19-8GTZKW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
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SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CB8GU2400.C8ET 8GB
Crucial Technology CB8GU2400.C8ET 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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Corsair CM4X8GD3200C16K4 8GB
Corsair CM4X8GD3200C16K4 8GB
内存RAM
Corsair CMD16GX3M2A1600C7 8GB
Corsair CMD16GX3M2A1600C7 8GB
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G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Avant Technology W641GU42J7240NC 8GB
Avant Technology W641GU42J7240NC 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Mushkin MR[A/B]4U320LLLM8G 8GB
内存RAM