TwinMOS 8DHE3MN8-HATP 2GB vs Kingston KF3200C20S4/16G 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值
更快的写入速度，GB/s

870.4 13.6

测试中的平均数值

Kingston KF3200C20S4/16G 16GB

需要考虑的原因
Kingston KF3200C20S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

48 87

左右 -81% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston KF3200C20S4/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 48
读取速度，GB/s

3,155.6 16.8
写入速度，GB/s

870.4 13.6
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 2895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-4133C19-8GTZRF 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 99U5584-017.A00LF 4GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

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Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Crucial Technology BLS8G4D32AESEK.M8FE 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Team Group Inc. Xtreem-D2-667 1GB

Team Group Inc. Xtreem-D2-667 1GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB