TwinMOS 8DHE3MN8-HATP 2GB vs Patriot Memory (PDP Systems) PSD44G240081 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值
更快的写入速度，GB/s

870.4 11.7

测试中的平均数值

Patriot Memory (PDP Systems) PSD44G240081 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240081 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 87

左右 -278% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 23
读取速度，GB/s

3,155.6 15.9
写入速度，GB/s

870.4 11.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2622

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMK16GX4M2Z3200C16 8GB

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V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

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Kingston 99U5474-037.A00LF 4GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266