TwinMOS 9DNPBNZB-TATP 4GB vs Corsair CMK16GX4M2K4333C19 8GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

Corsair CMK16GX4M2K4333C19 8GB

Corsair CMK16GX4M2K4333C19 8GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

Corsair CMK16GX4M2K4333C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4333C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 25

左右 -39% 更低的延时
更快的读取速度，GB/s

20.1 12.5

测试中的平均数值
更快的写入速度，GB/s

19.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

Corsair CMK16GX4M2K4333C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 18
读取速度，GB/s

12.5 20.1
写入速度，GB/s

8.4 19.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2180 3704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF564128CJ8N6NNSEG 4GB

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V-Color Technology Inc. TL48G30S8KSRGB15 8GB

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Samsung M471A5244CB0-CWE 4GB

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Crucial Technology CT8G4DFD824A.C16FF 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Corsair CMD32GX4M4A2666C16 8GB

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Kingston KVR16N11/8-SP 8GB

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Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

V-Color Technology Inc. TA48G30S815G 8GB

V-Color Technology Inc. TA48G30S815G 8GB