Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Chun Well Technology Holding Limited D4U1636181DC 16GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

Chun Well Technology Holding Limited D4U1636181DC 16GB

需要考虑的原因
Chun Well Technology Holding Limited D4U1636181DC 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 96

左右 -167% 更低的延时
更快的写入速度，GB/s

12.2 1,336.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 36
读取速度，GB/s

2,725.2 17.3
写入速度，GB/s

1,336.0 12.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

438 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4266C17-16GTRGB 16GB

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Kingston 9965662-016.A00G 16GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Heoriady M471A1K43CB1-CTD 8GB

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G Skill Intl F4-2666C15-8GVK 8GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB