Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs G Skill Intl F4-3466C16-16GTZ 16GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 17.9

测试中的平均数值

G Skill Intl F4-3466C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3466C16-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 96

左右 -317% 更低的延时
更快的写入速度，GB/s

14.5 1,336.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3466C16-16GTZ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 23
读取速度，GB/s

2,725.2 17.9
写入速度，GB/s

1,336.0 14.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

438 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 72ASS8G72LZ-2G3B2 64GB

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Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Corsair CMU64GX4M4C3000C15 16GB

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Samsung M471B1G73QH0-YK0 8GB

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G Skill Intl F4-3000C16-8GTRS 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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Corsair CMWX8GD3000C15W4 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMD64GX4M8A2666C15 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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Corsair CMV4GX3M1B1600C11 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N