Unifosa Corporation HU564403EP0200 4GB vs A-DATA Technology DDR3 1600G 4GB

总分

Unifosa Corporation HU564403EP0200 4GB

Unifosa Corporation HU564403EP0200 4GB

总分

A-DATA Technology DDR3 1600G 4GB

A-DATA Technology DDR3 1600G 4GB

差异规格评论

差异

Unifosa Corporation HU564403EP0200 4GB

需要考虑的原因
Unifosa Corporation HU564403EP0200 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

A-DATA Technology DDR3 1600G 4GB

需要考虑的原因
A-DATA Technology DDR3 1600G 4GB

报告一个错误

更快的读取速度，GB/s

14.2 13.4

测试中的平均数值
更快的写入速度，GB/s

9.3 7.7

测试中的平均数值

规格

完整的技术规格清单

Unifosa Corporation HU564403EP0200 4GB

A-DATA Technology DDR3 1600G 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 38
读取速度，GB/s

13.4 14.2
写入速度，GB/s

7.7 9.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2179 2393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Hewlett-Packard 7EH64AA# 8GB

Hewlett-Packard 7EH64AA# 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266