RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
321
RAM
ASint Technology BWHJ2LF4FN1 2GB
Latency
48
Read speed
4,585.8
Write speed
1,944.9
№
322
RAM
OCZ OCZ2VU8004G 4GB
Latency
48
Read speed
5,192.6
Write speed
2,345.2
№
323
RAM
Mushkin 991777 (996777) 2GB
Latency
48
Read speed
5,136.2
Write speed
2,162.8
№
324
RAM
A Force Manufacturing Ltd. 128X64K-67E 1GB
Latency
48
Read speed
2,487.1
Write speed
1,489.7
№
325
RAM
Patriot Memory (PDP Systems) 8000EL Series 2GB
Latency
48
Read speed
5,157.0
Write speed
2,451.9
№
326
RAM
Patriot Memory (PDP Systems) 8500C7 Series 2GB
Latency
48
Read speed
5,783.4
Write speed
2,643.6
№
327
RAM
Patriot Memory (PDP Systems) PDC22G6400LLK 1GB
Latency
48
Read speed
5,051.3
Write speed
2,192.9
№
328
RAM
Samsung M3 78T5263AZ3-CF7 4GB
Latency
48
Read speed
5,710.4
Write speed
2,476.1
№
329
RAM
Micron Technology 8HTF6464AY-53EB7 512MB
Latency
48
Read speed
3,532.0
Write speed
1,707.6
№
330
RAM
Patriot Memory (PDP Systems) PSD21G5332 1GB
Latency
48
Read speed
3,096.5
Write speed
1,477.6
№
331
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-Y5 512MB
Latency
48
Read speed
4,392.2
Write speed
1,819.6
№
332
RAM
Samsung M3 78T6553CZ0-CCC 512MB
Latency
49
Read speed
3,428.9
Write speed
1,633.6
№
333
RAM
G Skill Intl F2-5300CL4-2GBSQ 2GB
Latency
49
Read speed
4,320.2
Write speed
1,786.4
№
334
RAM
Smart Modular SG564568FG8N6KFSHM 2GB
Latency
49
Read speed
5,674.5
Write speed
2,331.5
№
335
RAM
Infineon (Siemens) 64T32000HU3.7A 256MB
Latency
49
Read speed
3,204.9
Write speed
1,681.5
№
336
RAM
Infineon (Siemens) 64T64000HU3.7A 512MB
Latency
49
Read speed
3,320.5
Write speed
1,702.2
№
337
RAM
Corsair CM2X1024-6400C4DHX 1GB
Latency
49
Read speed
4,931.3
Write speed
2,182.9
№
338
RAM
Nanya Technology M2Y2G64TU8HC0B-AC 2GB
Latency
49
Read speed
4,520.1
Write speed
2,104.0
№
339
RAM
Nanya Technology M2Y2G64TU8HC4B-AD 2GB
Latency
49
Read speed
5,310.6
Write speed
2,363.4
№
340
RAM
Nanya Technology M2Y2G64TU8HC6B-AD 2GB
Latency
49
Read speed
5,162.9
Write speed
2,360.9
«
14
15
16
17
18
19
»
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905711-038.A00G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
PNY Electronics PNY 2GB
Crucial Technology BL8G26C16U4B.8FD 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
A-DATA Technology DQVE1908 512MB
Samsung M393A8K40B21-CTC 64GB
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology DDR4 3600 8GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Kingston 9965516-112.A00LF 16GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X4GF2400C16N2 4GB
Samsung 1600 CL10 Series 8GB
Avant Technology J644GU44J2320NF 32GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
