RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
A-DATA Technology DOVF1B163G2G 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
A-DATA Technology DOVF1B163G2G 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DOVF1B163G2G 2GB
Report a bug
Faster reading speed, GB/s
4
16
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
56
Around -133% lower latency
Faster write speed, GB/s
12.5
1,925.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
24
Read speed, GB/s
4,315.2
16.0
Write speed, GB/s
1,925.7
12.5
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
658
2925
A-DATA Technology DOVF1B163G2G 2GB RAM comparisons
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Elpida EBJ17RG4EFWA-DJ-F 16GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMK128GX4M4A2400C16 32GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Kingston 9905403-134.A00LF 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology DDR4 3000 2OZ 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston 9965600-018.A00G 16GB
Kingston 9905471-006.A00LF 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M391A1G43EB1-CRC 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3200C16-8GVRB 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2400C14-16GRK 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Report a bug
×
Bug description
Source link