RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQKD1A08 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
A-DATA Technology DQKD1A08 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
A-DATA Technology DQKD1A08 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQKD1A08 1GB
Report a bug
Below the latency in the PassMark tests, ns
52
56
Around 7% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Faster reading speed, GB/s
20.1
2
Average value in the tests
Faster write speed, GB/s
10.5
1,145.9
Average value in the tests
Higher memory bandwidth, mbps
19200
4200
Around 4.57 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQKD1A08 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
56
Read speed, GB/s
2,614.5
20.1
Write speed, GB/s
1,145.9
10.5
Memory bandwidth, mbps
4200
19200
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
4-4-4-12 / 533 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
409
2455
A-DATA Technology DQKD1A08 1GB RAM comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQKD1A08 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Kingston MSI16D3LS1KFG/4G 4GB
Samsung M471A5244CB0-CWE 4GB
PUSKILL DDR3 1600 8G 8GB
Kingston XRGM6C-MIE 16GB
Samsung M393B1K70CH0-CH9 8GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KMKYF9-MIB 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CM4X16GC3000C15K4 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C14-8GTZRX 8GB
A-DATA Technology DDR3 1866 8GB
Team Group Inc. Quad-Vulcan-1866 8GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-2666C19-8GVK 8GB
Kingston 9905403-447.A00LF 4GB
Golden Empire CL15-17-17 D4-2666 8GB
PNY Electronics PNY 2GB
SK Hynix HMA82GS6DJR8N-VK 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-16GFX 16GB
Report a bug
×
Bug description
Source link