RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Compare
A-DATA Technology DQVE1908 512MB vs Essencore Limited IMA41GU6MFR8N-CF0 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
18.4
Average value in the tests
Reasons to consider
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
66
Around -200% lower latency
Faster write speed, GB/s
13.2
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
22
Read speed, GB/s
2,775.5
18.4
Write speed, GB/s
1,557.9
13.2
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
3178
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.D2GF2.AU30B 16GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-2400C15-8GRK 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston K821PJ-MID 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Kingston 99U5474-038.A00LF 4GB
Transcend Information TS2GSH64V6B 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43BB1-CTD 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905599-029.A00G 4GB
Corsair CMX8GX3M2A2000C9 4GB
INTENSO 5641152 4GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
Kingston KVR533D2N4 512MB
Kingston KHX2400C15D4/4G 4GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2400C17-8GIS 8GB
Corsair CMZ16GX3M4A2400C9 4GB
Corsair CMZ16GX3M4A2400C9 4GB
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-4000C15-8GVK 8GB
Report a bug
×
Bug description
Source link