RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
17.5
Average value in the tests
Faster write speed, GB/s
2,061.2
10.6
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
46
Around -18% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
39
Read speed, GB/s
4,937.3
17.5
Write speed, GB/s
2,061.2
10.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
2600
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF1G64HZ-3G2B2 8GB
SpecTek Incorporated ?????????????????? 2GB
Transcend Information TS1GSH64V4B 8GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-3000C15-8GRR 8GB
Apacer Technology 76.D105G.D090B 16GB
A-DATA Technology AD5U480016G-B 16GB
PUSKILL DDR3 1600 8G 8GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMW16GX4M1Z3200C16 16GB
Samsung M378B5673FH0-CH9 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AD5U480016G-B 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-4GRR 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2666C18-8GFX 8GB
Report a bug
×
Bug description
Source link