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AMD R534G1601U1S-UO 4GB
Samsung M378A5143DB0-CPB 4GB

AMD R534G1601U1S-UO 4GB vs Samsung M378A5143DB0-CPB 4GB

Overall score
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Overall score
star star star star star
Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

Differences Specifications Comments

Differences

AMD R534G1601U1S-UO 4GB Reasons to consider
AMD R534G1601U1S-UO 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 36
    Around 25% lower latency
  • Faster reading speed, GB/s
    14.7 left arrow 14.4
    Average value in the tests
Samsung M378A5143DB0-CPB 4GB Reasons to consider
Samsung M378A5143DB0-CPB 4GB
Report a bug
  • Faster write speed, GB/s
    10.6 left arrow 9.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
AMD R534G1601U1S-UO 4GB
Samsung M378A5143DB0-CPB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 36
  • Read speed, GB/s
    14.7 left arrow 14.4
  • Write speed, GB/s
    9.2 left arrow 10.6
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2272 left arrow 2490

AMD R534G1601U1S-UO 4GB RAM comparisons

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Samsung M378A5143DB0-CPB 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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