RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Faster write speed, GB/s
9.5
8.2
Average value in the tests
Reasons to consider
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Report a bug
Faster reading speed, GB/s
14.3
12.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
26
Read speed, GB/s
12.6
14.3
Write speed, GB/s
9.5
8.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2174
2633
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston XW21KG-MIE-NX 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Samsung M393B1K70QB0-CK0 8GB
Mushkin 99[2/7/4]189F 4GB
Crucial Technology CT25664BA160B.C16F 2GB
A-DATA Technology DDR4 2800 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Netac Technology Co Ltd EKBLACK4083016A 8GB
Samsung M471B5173BH0-CK0 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP26D4U6D8ME-16X 16GB
Kingston 9965525-140.A00LF 8GB
Kingston XK2M26-MIE-NX 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Gloway International (HK) STK4U2400D17161C 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3333C16-16GTZR 16GB
Report a bug
×
Bug description
Source link