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Crucial Technology BLT2G3D1608DT1TX0 2GB
EVGA 16G-D4-2666-MR 4GB
Compare
Crucial Technology BLT2G3D1608DT1TX0 2GB vs EVGA 16G-D4-2666-MR 4GB
Overall score
Crucial Technology BLT2G3D1608DT1TX0 2GB
Overall score
EVGA 16G-D4-2666-MR 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLT2G3D1608DT1TX0 2GB
Report a bug
Reasons to consider
EVGA 16G-D4-2666-MR 4GB
Report a bug
Faster reading speed, GB/s
17.3
13.6
Average value in the tests
Faster write speed, GB/s
12.8
9.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLT2G3D1608DT1TX0 2GB
EVGA 16G-D4-2666-MR 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
23
Read speed, GB/s
13.6
17.3
Write speed, GB/s
9.4
12.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2096
2942
Crucial Technology BLT2G3D1608DT1TX0 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Kingston 99U5471-012.A00LF 4GB
Kingston KH2400C15D4/8 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 99U5403-036.A00G 4GB
Corsair CMT64GX4M4Z3600C18 16GB
Samsung M3 91T2953GZ3-CF7 1GB
Kingston XN205T-MIE 16GB
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