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Crucial Technology CT51264BD1339.M16F 4GB
Team Group Inc. DDR4 3000 4GB

Crucial Technology CT51264BD1339.M16F 4GB vs Team Group Inc. DDR4 3000 4GB

Overall score
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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Overall score
star star star star star
Team Group Inc. DDR4 3000 4GB

Team Group Inc. DDR4 3000 4GB

Differences Specifications Comments

Differences

Crucial Technology CT51264BD1339.M16F 4GB Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 32
    Around 22% lower latency
Team Group Inc. DDR4 3000 4GB Reasons to consider
Team Group Inc. DDR4 3000 4GB
Report a bug
  • Faster reading speed, GB/s
    16.7 left arrow 12.1
    Average value in the tests
  • Faster write speed, GB/s
    13.1 left arrow 8.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Team Group Inc. DDR4 3000 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 32
  • Read speed, GB/s
    12.1 left arrow 16.7
  • Write speed, GB/s
    8.6 left arrow 13.1
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2045 left arrow 3064

Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Team Group Inc. DDR4 3000 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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