RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-5300CL4-1GBSA 1GB
Samsung M378A5244CB0-CWE 4GB
Compare
G Skill Intl F2-5300CL4-1GBSA 1GB vs Samsung M378A5244CB0-CWE 4GB
Overall score
G Skill Intl F2-5300CL4-1GBSA 1GB
Overall score
Samsung M378A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-5300CL4-1GBSA 1GB
Report a bug
Faster reading speed, GB/s
4
16.7
Average value in the tests
Reasons to consider
Samsung M378A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
52
Around -53% lower latency
Faster write speed, GB/s
12.3
1,479.2
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-5300CL4-1GBSA 1GB
Samsung M378A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
34
Read speed, GB/s
4,226.4
16.7
Write speed, GB/s
1,479.2
12.3
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 4
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
590
2584
G Skill Intl F2-5300CL4-1GBSA 1GB RAM comparisons
G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Samsung M378A5244CB0-CWE 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-5300CL4-1GBSA 1GB
Samsung M378A5244CB0-CWE 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston XCCT36-MIE 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C16-32GTZR 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-16GTZR 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SpecTek Incorporated 16G2666CL19 16GB
Samsung M378B5773DH0-CH9 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
PNY Electronics PNY 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair MK16GX44B3000C15 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CML8GX3M2A1600C9 4GB
EVGA 16G-D3-1600-MR 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Kingston 9905702-010.A00G 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Kingston 9905469-143.A00LF 4GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Report a bug
×
Bug description
Source link