RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2800C12-8GTXDG 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
G Skill Intl F3-2800C12-8GTXDG 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
G Skill Intl F3-2800C12-8GTXDG 8GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2800C12-8GTXDG 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
37
Around 43% lower latency
Faster reading speed, GB/s
17.4
16
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster write speed, GB/s
12.6
12.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2800C12-8GTXDG 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
21
37
Read speed, GB/s
17.4
16.0
Write speed, GB/s
12.2
12.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3130
2808
G Skill Intl F3-2800C12-8GTXDG 8GB RAM comparisons
Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology DDR4 2800 8GB
Crucial Technology CT25664AA800.M16FM 2GB
V-GEN D4H4GL26A8TS5 4GB
PUSKILL DDR3 1600 8G 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
SK Hynix DDR2 800 2G 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
G Skill Intl F4-3200C16-16GFX 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CM4X8GF2666Z16K4 8GB
G Skill Intl F5-5600J4040C16G 16GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Kingston 9905403-134.A00LF 2GB
A-DATA Technology DDR4 3600 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M393B5170FH0-CK0 4GB
AMD R748G2400S2S 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Shenzen Recadata Storage Technology 8GB
Report a bug
×
Bug description
Source link