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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences Specifications Comments

Differences

STEC (Silicon Tech) S1024R3NN2QK-I 1GB Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16
    Average value in the tests
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 63
    Around -70% lower latency
  • Faster write speed, GB/s
    12.6 left arrow 1,447.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    63 left arrow 37
  • Read speed, GB/s
    3,231.0 left arrow 16.0
  • Write speed, GB/s
    1,447.3 left arrow 12.6
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    478 left arrow 2808

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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