RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Compare
Golden Empire 1GB DDR2 800 CAS=4 1GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB
Overall score
Golden Empire 1GB DDR2 800 CAS=4 1GB
Overall score
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
Faster reading speed, GB/s
4
14.9
Average value in the tests
Reasons to consider
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Report a bug
Below the latency in the PassMark tests, ns
36
49
Around -36% lower latency
Faster write speed, GB/s
8.2
2,066.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
36
Read speed, GB/s
4,577.1
14.9
Write speed, GB/s
2,066.5
8.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
737
2281
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C18-16GRS 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Transcend Information TS1GSH64V1H 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M393A4K40CB1-CRC 32GB
Strontium EVMT8G1600U86S 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905625-152.A00G 16GB
G Skill Intl F5-5600J4040C16G 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMV4GX4M1A2666C18 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2D2666C16 8GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3000C16-8GISB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Inmos + 256MB
Kingston ACR512X64D3S13C9G 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Kingston 9905403-011.A03LF 2GB
Transcend Information TS1GSH64V4B 8GB
Report a bug
×
Bug description
Source link