RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M378A1G44BB0-CWE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Samsung M378A1G44BB0-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Samsung M378A1G44BB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
35
Around 20% lower latency
Faster write speed, GB/s
9.6
9.2
Average value in the tests
Reasons to consider
Samsung M378A1G44BB0-CWE 8GB
Report a bug
Faster reading speed, GB/s
15.1
12.4
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M378A1G44BB0-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
35
Read speed, GB/s
12.4
15.1
Write speed, GB/s
9.6
9.2
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2329
2488
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Samsung M378A1G44BB0-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Samsung M378A1G44BB0-CWE 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Corsair CMU16GX4M2A2666C16 8GB
Strontium EVMT8G1600U86S 8GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Jinyu 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CM4B8G2J2400A14K 8GB
Kingston 99U5469-045.A00LF 4GB
Essencore Limited KD4AGU880-32A160X 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
AMD AE34G1601U1 4GB
Essencore Limited KD48GU880-36A180X 8GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX3466C16D4/16GX 16GB
Kingston 99U5471-020.A00LF 4GB
Kingston 9905622-024.A00G 4GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-3200C16-8GTRS 8GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Report a bug
×
Bug description
Source link