RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
28
Around -27% lower latency
Faster reading speed, GB/s
21
12.4
Average value in the tests
Faster write speed, GB/s
19.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
22
Read speed, GB/s
12.4
21.0
Write speed, GB/s
9.6
19.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
4240
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
G Skill Intl F3-1600C11-4GIS 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston K000MD44U 4GB
Samsung 1600 CL10 Series 8GB
Samsung M378A1G43EB1-CRC 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-2800C16-4GVR 4GB
SK Hynix HYMP125U64CP8-S6 2GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Panram International Corporation W4U2666PS-8GC19 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMW16GX4M2K3600C16 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Samsung M378B5173EB0-YK0 4GB
Kllisre 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT64GX4M4Z3600C18 16GB
Report a bug
×
Bug description
Source link