RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-2666C18-8GFT 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-2666C18-8GFT 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
G Skill Intl F4-2666C18-8GFT 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
79
Around 63% lower latency
Faster write speed, GB/s
9.0
7.3
Average value in the tests
Reasons to consider
G Skill Intl F4-2666C18-8GFT 8GB
Report a bug
Faster reading speed, GB/s
14.1
13.4
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-2666C18-8GFT 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
79
Read speed, GB/s
13.4
14.1
Write speed, GB/s
9.0
7.3
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2423
1651
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
G Skill Intl F4-2666C18-8GFT 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
A-DATA Technology AD73I1B1672EG 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Kingston 9905458-017.A01LF 4GB
V-GEN D4H4GL26A8TS5 4GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology 78.DAGNN.4030B 16GB
Kingston KVR533D2N4 512MB
Gloway International (HK) STK2133C15-8GB 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3000C15-8GTZR 8GB
A-DATA Technology DDR4 2666 8GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905624-014.A00G 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C19-8GSXK 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C16-8GTRG 8GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-3600C14-8GTZNB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43BB1-CRC 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMR64GX4M4A2666C16 16GB
Report a bug
×
Bug description
Source link