RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung M393A1G40EB1-CRC 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung M393A1G40EB1-CRC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Samsung M393A1G40EB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
52
Around 44% lower latency
Faster reading speed, GB/s
13.4
10.5
Average value in the tests
Faster write speed, GB/s
9.0
7.7
Average value in the tests
Reasons to consider
Samsung M393A1G40EB1-CRC 8GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung M393A1G40EB1-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
52
Read speed, GB/s
13.4
10.5
Write speed, GB/s
9.0
7.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
2236
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Samsung M393A1G40EB1-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M393A1G40EB1-CRC 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMUA5210ME88HCF-3200 32GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
AMD R538G1601U2S-UO 8GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Peak Electronics 256X64M-67E 2GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
AMD R538G1601U2S 8GB
Kingston 9905624-036.A00G 8GB
Mushkin 991988 (996988) 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Samsung M393B5170FH0-CK0 4GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
Kingston 99U5474-023.A00LF 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMV4GX4M1A2400C16 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK16GX4M4B3866C18 4GB
Report a bug
×
Bug description
Source link