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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
G Skill Intl F4-3000C15-8GVRB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs G Skill Intl F4-3000C15-8GVRB 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Overall score
star star star star star
G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
G Skill Intl F4-3000C15-8GVRB 8GB Reasons to consider
G Skill Intl F4-3000C15-8GVRB 8GB
Report a bug
  • Faster reading speed, GB/s
    17.2 left arrow 8.8
    Average value in the tests
  • Faster write speed, GB/s
    13.3 left arrow 5.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
G Skill Intl F4-3000C15-8GVRB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    30 left arrow 30
  • Read speed, GB/s
    8.8 left arrow 17.2
  • Write speed, GB/s
    5.6 left arrow 13.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1344 left arrow 3208

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
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