RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs A-DATA Technology AM2P24HC8T1-BUSS 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
15.5
Average value in the tests
Reasons to consider
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
65
Around -110% lower latency
Faster write speed, GB/s
9.7
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
31
Read speed, GB/s
3,580.8
15.5
Write speed, GB/s
1,592.0
9.7
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2464
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173DB0-YK0 4GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9905630-018.A00G 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C19-8GSXKB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Transcend Information JM3200HLB-16GK 8GB
Kingston 9905403-444.A00LF 4GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A1K43BB2-CTD 8GB
Kingston 9905403-447.A00LF 4GB
Kingston XRGM6C-MIB 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Report a bug
×
Bug description
Source link