RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
13.5
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
65
Around -110% lower latency
Faster write speed, GB/s
10.6
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
31
Read speed, GB/s
3,580.8
13.5
Write speed, GB/s
1,592.0
10.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
2330
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston ACR24D4S7S8MB-8 8GB
Kingston 9965525-018.A00LF 4GB
Kingston ASU16D3LU1KBG/8G 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston X75V1H-MIE 32GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Samsung M393B1G70BH0-YK0 8GB
Golden Empire CL14-16-16 D4-3000 4GB
Samsung M378B5773DH0-CH9 2GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMSX16GX4M2A2666C18 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston X74R9W-MIE 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMD8GX4M2B3600C18 4GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M378A5244CB0-CRC 4GB
Report a bug
×
Bug description
Source link