RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMN32GX4M2Z3200C16 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMN32GX4M2Z3200C16 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMN32GX4M2Z3200C16 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around 8% lower latency
Reasons to consider
Corsair CMN32GX4M2Z3200C16 16GB
Report a bug
Faster reading speed, GB/s
17.2
16
Average value in the tests
Faster write speed, GB/s
15.3
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMN32GX4M2Z3200C16 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
26
Read speed, GB/s
16.0
17.2
Write speed, GB/s
12.5
15.3
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3692
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMN32GX4M2Z3200C16 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
V-GEN D4H4GL26A8TS5 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMN32GX4M2Z3200C16 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Kingston ACR16D3LS1NGG/2G 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Samsung M378A1G44AB0-CWE 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4X32GC3200C16K2E 32GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS2GSH64V4B 16GB
Crucial Technology CT51264BF160B.M16F 4GB
Corsair CMD16GX4M4B2400C10 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4400C19-32GTRS 32GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK128GX4M8A2400C14 16GB
Report a bug
×
Bug description
Source link