RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Reasons to consider
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Report a bug
Faster reading speed, GB/s
16.9
16
Average value in the tests
Faster write speed, GB/s
13.2
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
16.9
Write speed, GB/s
12.5
13.2
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3462
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
Samsung M378A1K43EB2-CWE 8GB
Kingston KHX4000C19D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Samsung M378A1K43EB2-CWE 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2666C15-8GVK 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston 9905624-044.A00G 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KHX2133C14D4/4G 4GB
AMD R748G2133U2S 8GB
Kingston CBD32D4S2D8HD-16 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965589-031.D01G 2GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Samsung M378B5673EH1-CF8 2GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
Report a bug
×
Bug description
Source link