RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT12864AA667.K8F 1GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT12864AA667.K8F 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT12864AA667.K8F 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
49
Around 51% lower latency
Faster write speed, GB/s
12.5
1,871.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62% higher bandwidth
Reasons to consider
Crucial Technology CT12864AA667.K8F 1GB
Report a bug
Faster reading speed, GB/s
4
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT12864AA667.K8F 1GB
Main characteristics
Memory type
DDR4
DDR2
Latency in PassMark, ns
24
49
Read speed, GB/s
16.0
4,345.9
Write speed, GB/s
12.5
1,871.0
Memory bandwidth, mbps
19200
5300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)
2925
649
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT12864AA667.K8F 1GB RAM comparisons
Samsung M378T5663DZ3-CF7 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378T5663QZ3-CF7 2GB
V-GEN D4H4GL30A8TS5 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905734-102.A00G 32GB
Kingston 9965525-018.A00LF 4GB
Chun Well Technology Holding Limited D4U0836144B 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2400C16-16GFT 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Teikon TMA451S6AFR8N-TFSC 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3000C15-8GRK 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Avant Technology W642GU42J5213N8 16GB
Samsung M393B1G70BH0-YK0 8GB
Hewlett-Packard 7EH67AA# 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT12864AA667.K8F 1GB
Kingston KHX2800C14D4/8GX 8GB
Panram International Corporation D4N2400PS-8G 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M4A2400C16 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Panram International Corporation PUD43000C158G2NJK 8GB
PNY Electronics PNY 2GB
Kingston KTP9W1-MIE 16GB
Report a bug
×
Bug description
Source link