RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F3-2133C10-4GAB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F3-2133C10-4GAB 4GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Faster reading speed, GB/s

16 14.8

Average value in the tests
Faster write speed, GB/s

12.5 10.1

Average value in the tests
Higher memory bandwidth, mbps

19200 12800

Around 1.5% higher bandwidth

Reasons to consider
G Skill Intl F3-2133C10-4GAB 4GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F3-2133C10-4GAB 4GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)

2925 2588

RAM Latency Calculator

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RAM 1

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RAM 2

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